The neutron irradiation test is conducted to assess the vulnerability of semiconductor devices to degradation in a neutron environment. The procedures outlined here apply to both integrated circuits and discrete semiconductor devices, and this test is specifically intended for military and space-related applications. It is classified as a destructive test.
The goals of the test are as follows:
a) to identify and quantify the degradation of critical parameters of semiconductor devices in relation to neutron fluence, and
b) to verify whether the specified parameters of the semiconductor devices remain within defined limits after exposure to a designated level of neutron fluence (refer to Clause 4).
