This part of IEC 63068provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC(Silicon Carbide)epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SIC homoepitaxial wafers,

This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

This part of IEC 62990 specifies general requirements for design, function and performance,and describes the test methods that apply to portable, transportable, and fixed equipment for the detection and concentration measurement of toxic gases and vapours in workplace atmospheres and other industrial and commercial applications. This document is applicable to continuously sensing equipment whose primary

This part of IEC 62047 specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of